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Titanium Dioxide molecules contain electrons that are confined to relatively narrow energy bands. The band of highest energy that contains electrons is the valence band, while the band lying above the valence band, i.e. the conduction band, has very few electrons. The difference in energies between the highest energy of the valence band and the lowest energy of the conduction band is termed the band gap energy. When a semiconductor absorbs a photon of energy equal to or greater than its band gap, an electron may be promoted from the valence band to the conduction band leaving behind an electron vacancy or “hole” in the valence band. If charge separation is maintained, the electron and the hole may migrate to the catalyst surface where they participate in redox reaction with sorbed species.